8.0 a super ba r rier rectifier features maximum rat ings and electrical characteristics @t a =25c unl ess otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. 1 of 3 top view bottom view left pi n rig ht pin note: pins left & right must be electrically connected at the printed circuit board. bottomside heat sink z ibo seno electronic engineering co., ltd. www.senocn.com SB0845L-sb08200l 08100l 0860l 0850l 0845l sb sb sb -55 to +150 -55 to +150 32 dc forward voltage drop t =25 at rated dc blocking voltage t =100 peak reverse curent t =25 @if=8a junctionto ambient typical thermal resistance average rectified output current (note1) unit v a ma /w storage temperature range note:1.valid provided that are kept at ambient temperature at a distance of 9.5mm from the case. 2.fr-4pcb.2oz.copper,minimum recommend pad layout .18.8mm14.4.anode pad dimensions 5.6mm14.4m m. operating junction temperature range 0.3 15 0.50 v r(rms) non-repetitive peak forward surge8.3ms single half sine-wave superimposed on rated 8.0 parameter symbol v rrm 45 dc blocking voltage v load(jedec method) working peak reverse voltage peak repetitive reverse voltage v rwm v v a 140 rms rectified voltage (note2) i o i fs m v fm i r r ja r jl t j t stg a a a 0880l sb sb 08150l s b 50 60 80 100 150 35 42 56 70 105 0.55 0.75 0.90 80 15 08200l sb 200 140 SB0845L-sb08200l case:to-277b molded plastic "green" molding compound excellent high temperature stability lead free: for rohs/lead free version high thermal reliability ultra lo w power loss, high efficiency high foward surge capability high junction temperture bypass diodes for solar panels ! ! ! ! mechanical d a ta ! ! t erm inals : plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! mounting position: any ! marking: type number ! patented super b a r r i er rectifier technology ! ! ! ! schottky barrier chip a t i 2 t rating for fusing (t < 8.3ms) 2 2 s i 81.3 a l l d a t a s h e e t
r r r fig.2 - typical instantaneous forward characteristics iinstantaneous forward current, amperes 0.1 1 10 0.01 0.40.2 0.6 0.8 1.0 1.2 1.4 1.6 instantaneous forward voltage, volts fig.4 - typical reverse characteristics percent of rated peak reverse voltage,% instantaneous reverse current, microamperes 0.01 0 0.1 1 100 10 20 40 60 80 100 fig.5 - typical junction capacitance reverse voltage, volts 0.1 100 junction capacitance, pf 10000 1.0 4.0 10 100 1000 t j =25 o c pulse width=300us 1% duty cycle t j =100 o c t j =25 o c t j = 25 o c f = 1.0 mhz vsig = 50mvp-p sb0860l SB0845L-sb0850l sb0880l sb08100l sb08150l sb08200l fig.1 - forward current derating curve average forward rectified current, amperes 10.0 8.0 4.0 2.0 6.0 0 0 50 100 150 lead temperature, o c 60 hz resistive or inductive load fig.3 - maximum non-repetitive peak forward surge current peak forward surge current, amperes number of cycles at 60hz 0 25 50 75 100 125 150 175 200 1 10 100 pulse width 8.3ms single half-sire-wave (jedec method) 2 of 3 z ibo seno electronic engineering co., ltd. www.senocn.com SB0845L-sb08200l SB0845L-sb08200l a l l d a t a s h e e t
sb08**l to-277b 3 of 3 ordering information part number case packaging 5000/tape & reel z ibo seno electronic engineering co., ltd. www.senocn.com outline dimensions suggested pad lay out dim min max a 1.05 1.15 b 0.33 0.43 c 0.80 0.99 d 1.70 1.88 e 3.90 4.05 f 3.054 typ g 6.40 6.60 h 1.84 typ i 5.30 5.45 j 3.549 typ k 0.75 0.95 l 0.50 0.65 m 1.10 1.41 all dimensi ons in mm dimensions value (i n m m) 1.840 a 3.360 c 1.390 b 4.860 d 1.400 g i c a b b e d c h f k j l m h a e d b c to-277b e h 0.852 SB0845L-sb08200l SB0845L-sb08200l a l l d a t a s h e e t
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